Lowdimensional materials

Low-dimensional materials are nowadays pivotal for new emerging quantum technologies. The goal of the course is to give an overview of the electronic and magnetic properties of materials when their characteristic dimension reduces from 3 to 2, 1 and 0. The students will acquire knowledge about the main representatives of each dimensional group. The students will gain competences for evaluation of the selected material system from the point of view of their application in selected electronic devices.

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1. Electronic Properties

2. Magnetic properties

3. Quantum dots

1. group II-VI quantum dots 2. group III-V quantum dots 3. Si-Ge quantum dots

1. Nanotubes/nanowires

1. Carbon nanotubes 2. MoS2

1. 2D materials

1. Graphene 2. Transition metal dichalcogenides 3. Hexagonal boron nitride 4. 2D oxides

Knowledge and understanding: the students gain knowledge of key properties of electronic energy structure in systems with reduced dimensionality. They gain knowledge from the field of the role of magnetic field on the solutions of Schrödinger equation and the emergence of Landau levels in two- and zero-dimensional material systems. Based on this knowledge they understand the cause for characteristic electronic energy structures in various technologically relevant low dimensional materials. They understand what causes characteristic behaviour of these materials in high magnetic fields.

• John H. Davies, The Physics of Low-Dimensional Semiconductors, an introduction, Cambridge University Press (1998)Catalogue E-version
• Frank J. Owens, The Physics of Low Dimensional Materials, World Scientific (2017).Catalogue

Written exam, oral exam (50/50)

Associate Professor of Physics at the University of Nova Gorica

Field of research: Transport properties of organic semiconductor layers and blends of organic semiconductotrs and 2D materials. Time-dependent photoconductivity of Van der Waals heterostructures, organic field-effect transistors, organic photovoltaics, photodetectors, biosensors and other novel devices.

1. MURASTOV, Gennadiy, AWAIS ASLAM, Muhammad, LEITNER, Simon, TKACHUK, Vadym, PLUTNAROVÁ, Iva, PAVLICA, Egon, RODRIGUEZ, Raul D., SOFER, Zdeněk, MATKOVIĆ, Aleksandar. Multi-layer palladium diselenide as a contact material for two-dimensional tungsten diselenide field-effect transistors. Nanomaterials. [Online ed.]. 2024, vol. 14, no. 5, [article no.] 481, str. 1-15, ilustr. ISSN 2079-4991. https://www.mdpi.com/2079-4991/14/5/481, Repozitorij Univerze v Novi Gorici - RUNG, DOI: 10.3390/nano14050481.
2. CHHIKARA, Manisha, BRATINA, Gvido, PAVLICA, Egon. Role of graphene topography in the initial stages of pentacene layer growth. ACS omega. 2023, vol. 8, issue 30, str. 27534-27542, ilustr. ISSN 2470-1343. https://pubs.acs.org/doi/10.1021/acsomega.3c03174?ref=PDF, Repozitorij Univerze v Novi Gorici - RUNG, DOI: 10.1021/acsomega.3c03174.
3. URBANČIČ, Jurij, TOMSIC, Erika, CHHIKARA, Manisha, PASTUKHOVA, Nadiia, TKACHUK, Vadym, DIXON, Alex, MAVRIČ, Andraž, HASHEMI, Payam, SABAGHI, Davood, SHAYGAN NIA, Ali, BRATINA, Gvido, PAVLICA, Egon. Time-of-flight photoconductivity investigation of high charge carrier mobility in Ti3C2Tx MXenes thin-film. Diamond and related materials. [Print ed.). 2023, vol. 135, [article no.] 109879, str. 1-6. ISSN 0925-9635. Repozitorij Univerze v Novi Gorici - RUNG, DOI: 10.1016/j.diamond.2023.109879.
4. YU, Liyang, PAVLICA, Egon, LI, Ruipeng, ZHONG, Yufei, SILVA, Carlos, BRATINA, Gvido, MÜLLER, Christian, AMASSIAN, Aram, STINGELIN, Natalie. Conjugated polymer mesocrystals with structural and optoelectronic coherence and anisotropy in three dimensions. Advanced materials. [Online ed.]. 2022, vol. 43, iss. 1, [article no.] 2103002, str. 1-9, ilustr. ISSN 1521-4095. https://onlinelibrary.wiley.com/doi/epdf/10.1002/adma.202103002, Repozitorij Univerze v Novi Gorici - RUNG, DOI: 10.1002/adma.202103002.
5. CARROLI, Marco, DIXON, Alex, HERDER, Martin, PAVLICA, Egon, HECHT, Stefan, BRATINA, Gvido, ORGIU, Emanuele, SAMORÌ, Paolo. Multiresponsive nonvolatile memories based on optically switchable ferroelectric organic field-effect transistors. Advanced materials. 2021, vol. 33, iss. 14, str. 1-10, ilustr. ISSN 0935-9648. Repozitorij Univerze v Novi Gorici - RUNG, DOI: 10.1002/adma.202007965.